MJE18006 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operati

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18006/D ™ Data Sheet SWITCHMODE™ Designer's MJE18006 * MJF18006 * *Motorola Preferred Device NPN Bipolar Power Transistor For Switching P

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE18006 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·High voltage ,high speed APPLICATIONS ·Designed for use in 220V