MJE18002 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operati

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18002/D ™ Data Sheet SWITCHMODE™ Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18002 have an

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE18002 www.datasheet4u.com DESCRIPTION ·With TO-220 package ·High voltage ,high speed APPLICATIONS ·Designed for use in 220V

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18002D2/D MJE18002D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-