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MJD6039 | SILICON POWER TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJD6036/D
Complementary Darlington Power Transistors
DPAK For Surface Mount Applications
• • • • • • • Designed for general purpose |
Motorola |
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MJD6039 | Darlington Power Transistors MJD6039, NJVMJD6039T4G
Darlington Power Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or driver stages in applications such as switching regul |
ON Semiconductor |
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MJD6039 | Silicon NPN Power Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector–Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min) ·High DC Current Gain-
: hFE = 500(Min)@IC= 2A ·Minimum Lot-to-Lot variations for robus |
Inchange Semiconductor |
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MJD6039T4G | Darlington Power Transistors MJD6039, NJVMJD6039T4G
Darlington Power Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or driver stages in applications such as switching regul |
ON Semiconductor |
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