MJD47 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistors INCHANGE Semiconductor MJD47 DESCRIPTION ·DC Current Gain -hFE = 30~150@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) ·Minimum Lot-to-Lot variat

SMD Type Transistors NPN Epitaxial Silicon Transistor MJD47;MJD50 Features Load Formed for Surface Mount Application Straight Lead + 0.29 .7 0 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+

MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G High Voltage Power Transistors DPAK for Surface Mount Applications Designed for line operated audio output amplifier, switchmode supply drivers and other switching appl

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD47/D High Voltage Power Transistors DPAK For Surface Mount Applications • • • • • • Designed for line operated audio output amplifi

® MJD47 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4�

MJD47 / MJD50 — NPN Epitaxial Silicon Transistor March 2014 MJD47 / MJD50 NPN Epitaxial Silicon Transistor Features • High-Voltage and High-Reliability • D-PAK for Surface-Mount Applications • Lead-F

MJD47T4 Datasheet NPN power transistor TAB 23 1 DPAK C (2, TAB) (1) B E (3) Features • Surface-mounting DPAK (TO-252) power package in tape and reel • Electrically similar to TIP47 Application • Switch