MJD200 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE = 70(Min) @ IC= 0.5A ·Low Collector Saturation Voltage- : VCE(sat) = 0.3V(Max.)@ IC= 0.5 A ·Complement to the PNP MJD210 ·Minimum Lot-to

www.DataSheet4U.com MJD200 (NPN) MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier appl

MJD200 MJD200 D-PAK for Surface Mount Applications • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “ - I “ S

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD200/D Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power,