डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MJD128 | Silicon PNP Darlington Power Transistor isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -4A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -120V(Min) ·DPAK for Surface Mount Applications |
Inchange Semiconductor |
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MJD128T4G | Complementary Darlington Power Transistor www.DataSheet4U.com
MJD128T4G (PNP)
Preferred Device
Complementary Darlington Power Transistor
DPAK For Surface Mount Applications
Features http://onsemi.com
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ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |