डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MJD112L | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
MJD112/L
EPITAXIAL PLANAR NPN TRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=4 |
KEC |
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MJD112 | Silicon NPN transistor | BLUE ROCKET ELECTRONICS |
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MJD112 | Silicon NPN Power Transistor | Inchange Semiconductor |
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MJD112 | NPN Silicon Darlington Transistor | Fairchild Semiconductor |
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MJD112 | Epitaxial Planar NPN Transistor | GME |
|
MJD112 | SILICON POWER TRANSISTORS | Motorola |
|
MJD112T4 | Complementary power Darlington transistors | STMicroelectronics |
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MJD112 | Silicon NPN epitaxial planer Transistors | MCC |
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MJD112 | NPN Transistor | MCC |
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MJD112 | COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS | CDIL |
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MJD112 | Complementary power Darlington transistor | STMicroelectronics |
www.DataSheet.in | 2017 | संपर्क |