MJB3055 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| MJB3055 | NPN Transistor isc Silicon NPN Power Transistor
MJB3055
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min) ·High DC Current Gain-
: hFE= 20-100@IC= 4A ·Minimum Lot-to-Lot variations for robust device |
 INCHANGE |
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| MJB3055 | NPN Transistor | INCHANGE |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |