डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MJB2955 | PNP Transistor isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -60V(Min) ·High DC Current Gain-
: hFE= 20-100@IC= -4A ·100% avalanche tested ·Minimum Lot-to-Lot variations |
INCHANGE |
|
MJB2955 | PNP Transistor | INCHANGE |
www.DataSheet.in | 2017 | संपर्क |