डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MJ901 | PNP Transistor isc Silicon PNP Darlington Power Transistor
MJ901
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min.) ·High DC Current Gain-
: hFE= 1000(Min.)@IC= -3A ·Low Collector Saturation Voltage |
INCHANGE |
|
MJ901 | (MJ900 / MJ901) Complementary Power Transistors www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
|
Motorola Semiconductor |
|
MJ901 | (MJ900 / MJ901) Complementary Power Darlingtons www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
|
ST Microelectronics |
|
MJ901 | (MJ900 / MJ901) COMPLEMENTARY POWER DARLINGTONS MJ900 – MJ901 PNP COMPLEMENTARY POWER DARLINGTONS
The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. Th |
Comset Semiconductors |
www.DataSheet.in | 2017 | संपर्क |