MJ90 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| MJ90 | (MJ900 / MJ901) Complementary Power Darlingtons www.DataSheet4U.com
COMSET
SEMICONDUCTORS
MJ900/901/1000/1001 COMPLEMENTARY POWER DARLINGTONS
The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, |
 COM SET |
|
| MJ900 | PNP Transistor isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min.) ·High DC Current Gain-
: hFE= 1000(Min.)@IC= -3A ·Low Collector Saturation Voltage-
: VCE |
 INCHANGE |
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| MJ900 | (MJ900 / MJ901) Complementary Power Transistors www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
|
 Motorola Semiconductor |
|
| MJ900 | (MJ900 / MJ901) Complementary Power Darlingtons www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
|
 ST Microelectronics |
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| MJ900 | (MJ900 / MJ901) COMPLEMENTARY POWER DARLINGTONS MJ900 – MJ901 PNP COMPLEMENTARY POWER DARLINGTONS
The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. Th |
 Comset Semiconductors |
|
| MJ901 | PNP Transistor isc Silicon PNP Darlington Power Transistor
MJ901
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min.) ·High DC Current Gain-
: hFE= 1000(Min.)@IC= -3A ·Low Collector Saturation Voltage |
INCHANGE |
|
| MJ901 | (MJ900 / MJ901) Complementary Power Transistors www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
|
Motorola Semiconductor |
शेयर लिंक :
[1] [2]
www.DataSheet.in | 2017 | संपर्क |