डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MJ411 | Bipolar NPN Device MJ411
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1 |
Seme LAB |
|
MJ411 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V(Min.) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8 V(Max)@ IC = 1A ·Minimum Lot-to-Lot va |
INCHANGE |
|
MJ411 | NPN POWER TRANSISTOR MJ410, MJ411
High-reliability discrete products and engineering services since 1977
NPN POWER TRANSISTORS
FEATURES • Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add � |
Digitron |
www.DataSheet.in | 2017 | संपर्क |