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MJ3000 | 10 AMPERE DARLINGTON POWER TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ2500/D
MJ2955 (See 2N3055) MJ2955A (See 2N3055A)
Medium-Power Complementary Silicon Transistors
MJ2500 MJ2501*
NPN
PNP
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Motorola |
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MJ3000 | Bipolar NPN Device www.DataSheet4U.com
MJ3000
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Me |
Semelab PLC |
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MJ3000 | (MJ3000 / MJ3001) Complementary Silicon Power Darlington Transistors www.DataSheet4U.com
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ST Microelectronics |
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MJ3000 | Silicon NPN Power Transistors SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
MJ3000/3001
DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ2500/2501
APPLICATIONS ·For u |
SavantIC |
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MJ3000 | (MJ3000 / MJ3001) COMPLEMENTARY POWER DARLINGTONS PNP MJ3000 – MJ3001
COMPLEMENTARY POWER DARLINGTONS
The MJ3000, and MJ3001 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. Th |
Comset Semiconductors |
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MJ3000 | NPN Transistor isc Silicon NPN Darlingtion Power Transistor
DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain
hFE = 1000 (Min) @ IC = 5A ·Collector-Emitter Breakdown Voltage
V(BR)CEO= 60V(Min) ·Com |
INCHANGE |
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MJ3000 | NPN Transistor MJ2500-MJ2501-PNP MJ3000-MJ3001-NPN
High-reliability discrete products and engineering services since 1977
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
FEATURES • Available as “HR” (high reliabil |
DIGITRON |
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