MJ2955 डाटा शीट PDF( Datasheet )

isc Silicon PNP Power Transistors DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC= -4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.1V(Max)@ IC= -4A ·Complement to Type

2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation - PD = 115W at TC = 25°C. • DC current gain hFE = 20 t

MJ2955 PNP SILICON POWER TRANSISTORS The MJ2955 is a silicon Planar Epitaxial NPN transistor in Jedec TO-3 metal case. Designed for general purpose, moderate speed, switching and amplifier applications Compli

MJ2955 Silicon PNP Power Transistor Audio Power Amp, Medium Speed Switch TO−3 Type Package Description: The MJ2955 is a silicon PNP transistor in a TO−3 type case designed for general purpose switching and

TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector-emitter saturation voltage • Complementary NPN - PNP tr

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055/D Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. • DC Current Gain �

2N3055 NPN MJ2955 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3055 and MJ2955 are complementary silicon power transistors manufactu