MJ2500 डाटा शीट PDF( Datasheet )

isc Silicon PNP Darlingtion Power Transistor DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 1000 (Min) @ IC = -5A ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V(Min)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ2500/D MJ2955 (See 2N3055) MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 MJ2501* NPN PNP ÎÎÎÎÎÎÎÎÎÎ

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package www.datasheet4u.com ·DARLINGTON ·High DC current gain ·Complement to type MJ3000/3001 APPLICATIONS

PNP MJ2500 – MJ2501 COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. Th

MJ2500-MJ2501-PNP MJ3000-MJ3001-NPN High-reliability discrete products and engineering services since 1977 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS FEATURES • Available as “HR” (high reliabil