MJ15012 डाटा शीट PDF( Datasheet )

isc Silicon PNP Power Transistor MJ15012 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 20(Min.)@IC = -2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max)@ IC = -4A ·Comp

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ15011/D Advance Information Complementary Silicon Power Transistors The MJ15011 and MJ15012 are PowerBase power transistors designed for high�

www.DataSheet4U.com MJ15011 (NPN), MJ15012 (PNP) Preferred Devices Complementary Silicon Power Transistors The MJ15011 and MJ15012 are PowerBase power transistors designed for high−power audio, disk head po