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MJ11032 | 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ11028/D
High-Current Complementary Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applications. |
Motorola |
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MJ11032 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP)
High-Current Complementary Silicon Power Transistors
High−Current Complementary Silicon Power Transistors are for use as output devices in complementary |
ON |
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MJ11032 | COMPLEMENTARY DARLINGTON POWER TRANSISTOR NPN
PNP MJ11029 MJ11031 MJ11033
LAB
MECHANICAL DATA Dimensions in mm (inches)
25.4 (1.0) 10.92 (0.430) 1.57 (0.062)
SEME
MJ11028 MJ11030 MJ11032
COMPLEMENTARY DARLINGTON POWER TRANSISTOR
FEATURES
30 .15 ( |
Seme LAB |
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MJ11032 | Silicon NPN Transistor MJ11032 (NPN) & MJ11033 (PNP) Silicon Darlington Transistors High Current, General Purpose TO−3 Type Package
Description:
The MJ11032 (NPN) and MJ11033 (PNP) are silicon complementary Darlington transistors |
NTE |
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MJ11032 | Power Transistor MJ11028, MJ11030, MJ11032 – NPN MJ11029, MJ11031, MJ11033 – PNP
High-reliability discrete products and engineering services since 1977
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
FEATURES Avai |
DIGITRON |
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MJ11032 | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= 120V(Min.) ·High DC Current Gain-
: hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A ·Complement to th |
INCHANGE |
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MJ11032 | Darlington Power Transistors Darlington Power Transistors (NPN) MJ11032
Darlington Power Transistors (NPN)
Features
Designed for use as output devices in complementary General purpose amplifier
High Gain Darlington performance � |
TAITRON |
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