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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MJ11017 | 30 AMPERE DARLINGTON POWER TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ11017/D
Complementary Darlington Silicon Power Transistors
. . . designed for use as general purpose amplifiers, low frequency switching and mot |
Motorola Inc |
|
MJ11017 | DARLINGTON POWER TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ11017/D
Complementary Darlington Silicon Power Transistors
. . . designed for use as general purpose amplifiers, low frequency switching and mot |
ON Semiconductor |
|
MJ11017 | PNP Transistor isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 400(Min)@ IC= -10A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -150V(Min) ·Low Collector-Emitter Saturation Vo |
INCHANGE |
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