डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MGF1601 | MICROWAVE POWER GaAs FET www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
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Mitsubishi Electric |
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MGF1601B | MICROWAVE POWER GaAs FET MITSUBISHI SEMICONDUCTOR GaAs FET
MGF1601B
MICROWAVE POWER GaAs FET
DESCRIPTION
The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillato |
Mitsubishi |
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MGF1601B-01 | High-power GaAs FET < High-power GaAs FET (small signal gain stage) >
MGF1601B-01
S to X BAND / 0.15W non - matched
DESCRIPTION
The MGF1601B-01, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X |
Mitsubishi |
www.DataSheet.in | 2017 | संपर्क |