MEBSS138 डाटा शीट PDF( Datasheet )

MEBSS138/MEBSS138-G N - Channel 50V (D-S) MOSFET GENERAL DESCRIPTION The MEBSS138 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench techno

MEBSS138/MEBSS138-G N - Channel 50V (D-S) MOSFET GENERAL DESCRIPTION The MEBSS138 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench techno

MEBSS138D/MEBSS138D-G N-Channel 50V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The MEBSS138D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density ,

MEBSS138D/MEBSS138D-G N-Channel 50V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The MEBSS138D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density ,

MEBSS138DK/MEBSS138DK-G N-Channel 50V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The MEBSS138DK is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density

MEBSS138DK/MEBSS138DK-G N-Channel 50V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The MEBSS138DK is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density