डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MEB | Micro Edgeboard www.DataSheet4U.com
Micro Edgeboard - .050" Contact Spacing
The Micro Edgeboard (MEB) connector series provides a combination of high density and high reliability for applications in airborne and space systems |
ITT Industries |
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MEB | Metallized Polyester Film Capacitor MEB SERIES
Metallized Polyester Film Capacitor, Mini Box Type with 5mm Pitch
MEB are metallized polyester film with stacked technology as dielectric and encapsulated in plastic case with epoxy resin filled.
FE |
HITANO |
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MEB00806 | Three-Phase Diode MEB00806
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Three-Phase Diode Bridge Module
60 Amperes/800 Volts
A D J L
P - DIA. (2 TYP.)
G
C
Q - M4 THD. (5 TYP.)
K H H B |
Powerex Powers |
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MEBSS123 | N-Channel MOSFET N - Channel 100-V (D-S) MOSFET
MEBSS123/MEBSS123-G
GENERAL DESCRIPTION
The MEBSS123 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench tec |
Matsuki |
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MEBSS123-G | N-Channel MOSFET N - Channel 100-V (D-S) MOSFET
MEBSS123/MEBSS123-G
GENERAL DESCRIPTION
The MEBSS123 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench tec |
Matsuki |
|
MEBSS138 | N-Channel MOSFET MEBSS138/MEBSS138-G
N - Channel 50V (D-S) MOSFET
GENERAL DESCRIPTION
The MEBSS138 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench techno |
Matsuki |
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MEBSS138-G | N-Channel MOSFET MEBSS138/MEBSS138-G
N - Channel 50V (D-S) MOSFET
GENERAL DESCRIPTION
The MEBSS138 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench techno |
Matsuki |
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