ME9926 डाटा शीट PDF( Datasheet )

Dual N-Channel 2.5-V (G-S) MOSFET GENERAL DESCRIPTION The ME9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This hi

Aonetek Semiconductor Co., LTD. Dual N-Channel High Density Trench MOSFET ME9926 PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 6.0A 28 @ VGS = 4.5V 20V 5.2A 44 @ VGS = 2.5V FEATURES ●Super high dense

Dual N-Channel 20V (D-S) MOSFET ME9926/ME9926-G GENERAL DESCRIPTION The ME9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench tec