ME70N03 डाटा शीट PDF( Datasheet )

www.DataSheet4U.com 30V N-Channel Enhancement Mode MOSFET V DS =30V R DS(ON) ,Vgs@10V,Ids@45A=6 m Ù R DS(ON) ,[email protected],Ids@30A=10 m Ù FEATURES Advanced trench process technology High Density Cell Design For

25V N-Channel Enhancement Mode MOSFET VDS=25V RDS(ON), Vgs@10V,Ids@45A = 6m RDS(ON), [email protected],Ids@30A =9m FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Special

ME70N03S/ME70N03S-G 30V N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME70N03S is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS tre

ME70N03S/ME70N03S-G 30V N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME70N03S is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS tre