ME60N03 डाटा शीट PDF( Datasheet )

ME60N03 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A = 8.5mΩ RDS(ON), [email protected],Ids@20A =13mΩ FEATURES Advanced trench process technology High density cell design for ultra low on-re

ME60N03/ME60N03-G -g30V N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME60N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench

25V N-Channel Enhancement Mode MOSFET VDS=25V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), [email protected],Ids@30A =13m ME60N03A FEATURES Advanced trench process technology High density cell design for ultra low on-resi

ME60N03AS 25V N-Channel Enhancement Mode MOSFET VDS=25V RDS(ON), Vgs@10V,Ids@30A ≦ 9mΩ RDS(ON), Vgs@ 5V,Ids@15A ≦18mΩ APPLICATIONS ● Motherboard (V-Core) ● DC/DC Converter ● Load Switch ● LCD Dis

ME60N03S/ME60N03S-G 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A ≦ 10mΩ RDS(ON), [email protected],Ids@15A ≦18.5mΩ FEATURES Advanced trench process technology High density cell design fo

ME60N03S/ME60N03S-G 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A ≦ 10mΩ RDS(ON), [email protected],Ids@15A ≦18.5mΩ FEATURES Advanced trench process technology High density cell design fo