डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
ME4812 | N-Channel 30-V(D-S) MOSFET ME4812/ME4812-G
N-Channel 30-V(D-S) MOSFET, ESD Protection
GENERAL DESCRIPTION
The ME4812 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS tren |
Matsuki |
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ME4812-G | N-Channel 30-V(D-S) MOSFET ME4812/ME4812-G
N-Channel 30-V(D-S) MOSFET, ESD Protection
GENERAL DESCRIPTION
The ME4812 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS tren |
Matsuki |
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ME4812B | N-Channel 30-V(D-S) MOSFET ME4812B/ME4812B-G
N-Channel 30-V (D-S) MOSFET Integrated Schottky Diode
GENERAL DESCRIPTION
The ME4812B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell dens |
Matsuki |
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ME4812B-G | N-Channel 30-V(D-S) MOSFET ME4812B/ME4812B-G
N-Channel 30-V (D-S) MOSFET Integrated Schottky Diode
GENERAL DESCRIPTION
The ME4812B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell dens |
Matsuki |
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