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ME35N06T-G DataSheet

No. Partie # Fabricant Description Fiche Technique
1
ME35N06T-G

Matsuki
N-Channel 60V (D-S) MOSFET

● RDS(ON)≦32mΩ@VGS=10V
● RDS(ON)≦40mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management in Note book
● DC/DC Converter
● Load Switch
● LCD
Datasheet
2
ME35N06T

Matsuki
N-Channel 60V (D-S) MOSFET

● RDS(ON)≦32mΩ@VGS=10V
● RDS(ON)≦40mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management in Note book
● DC/DC Converter
● Load Switch
● LCD
Datasheet



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