ME35N06 डाटा शीट PDF( Datasheet )

N-Channel 60-V (D-S) MOSFET ME35N06/ME35N06-G GENERAL DESCRIPTION The ME35N06-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This hi

N-Channel 60-V (D-S) MOSFET ME35N06/ME35N06-G GENERAL DESCRIPTION The ME35N06-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This hi

N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME35N06F is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is

N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME35N06F is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is

N-Channel 60-V (D-S) MOSFET ME35N06P/ME35N06P-G GENERAL DESCRIPTION The ME35N06P is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This h

N-Channel 60-V (D-S) MOSFET ME35N06P/ME35N06P-G GENERAL DESCRIPTION The ME35N06P is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This h

N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION The ME35N06T is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is