MDP1922 डाटा शीट PDF( Datasheet )

MDP1922 Single N-channel Trench MOSFET 100V, 97A, 8.4mΩ General Description The MDP1922 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching pe

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.4mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devi