MD200 डाटा शीट PDF( Datasheet )

Diode Modules MD 200 YANGZHOU POSITIONING TECH. CO., LTD IFAV = 200 A VRRM = 1000-2400V VRRM (V) 1000 1200 1600 1800 2200 2400 VRSM (V) 1100 1300 1700 1900 2300 2500 TYPE MD200-10 MD200-12 MD200-16 MD200-18

MD2001FH High voltage NPN Power transistor for standard Definition CRT display Preliminary Data Features ■ ■ ■ ■ ■ State-of-the-art technology: – Diffused collector “Enhanced generation” More

MD2001FX High voltage NPN Power transistor for standard Definition CRT display Preliminary Data Features ■ ■ ■ ■ ■ State-of-the-art technology: – Diffused collector “Enhanced generation” More

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable op

www.DataSheet4U.com MD2009DFX High voltage NPN Power transistor for standard definition CRT display General features ■ ■ ■ ■ ■ ■ ■ State-of-the-art technology: – diffused collector “enhance