MBRS360 डाटा शीट PDF( Datasheet )

MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of�

Surface Mount Schottky Power Rectifier MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G, NRVBS360BNT3 This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. Stat

Chip Schottky Barrier Rectifier MBRS320G THRU MBRS3200G 3.0A Surface Mount Schottky Barrier Rectifiers -20V-200V Features • Batch process design, excellent power dissipation offers better reverse leakage cu

MBRS360P Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construct

MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of�

Surface Mount Schottky Power Rectifier MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G, NRVBS360BNT3 This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. Stat

Bulletin PD-20586 rev. D 07/04 SCHOTTKY RECTIFIER MBRS360TR 3 Amp IF(AV) = 3.0Amp VR = 60V Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM Value 3.0 Units A 60 V