MBRS340 डाटा शीट PDF( Datasheet )

MBRS340 SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in swit

MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of�

Bulletin PD-20585 rev. E 07/04 MBRS340TR SCHOTTKY RECTIFIER 3 Amp IF(AV) = 3.0Amp VR = 40V Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM @ t p= 5 µs sine VF TJ @3.0

Chip Schottky Barrier Rectifier MBRS320G THRU MBRS3200G 3.0A Surface Mount Schottky Barrier Rectifiers -20V-200V Features • Batch process design, excellent power dissipation offers better reverse leakage cu

MBRS320P, MBRS330P, MBRS340P Surface Mount Schottky Power Rectifier These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxia

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRS340T3/D Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode

MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of�