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MBRS320 डाटा शीट PDF( Datasheet )


डेटा पत्रक ( Datasheet PDF )

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MBRS320   SCHOTTKY POWER RECTIFIER

MBRS320 SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in swit
Fairchild Semiconductor
Fairchild Semiconductor
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MBRS320   SCHOTTKY BARRIER RECTIFIERS

MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of�
ON Semiconductor
ON Semiconductor
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MBRS320   SCHOTTKY RECTIFIER

Bulletin PD-20645 rev. D 03/03 MBRS320 SCHOTTKY RECTIFIER 3 Amp SMC Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM @ t p= 5 µs sine VF TJ @ 3.0 Apk, TJ = 125°C rang
International Rectifier
International Rectifier
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MBRS3200G   3.0A Surface Mount Schottky Barrier Rectifiers

Chip Schottky Barrier Rectifier MBRS320G THRU MBRS3200G 3.0A Surface Mount Schottky Barrier Rectifiers -20V-200V Features • Batch process design, excellent power dissipation offers better reverse leakage cu
American First Semiconductor
American First Semiconductor
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MBRS3200T3G   Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier MBRS3200T3G, NRVBS3200T3G, NRVBS3200NT3G This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geomet
ON Semiconductor
ON Semiconductor
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MBRS3201   SCHOTTKY FAST SOFT - RECOVERY RECOVERY POWER RECTIFIER

Certificate TH97/10561QM Certificate TW00/17276EM MBRS3201 PRV : 200 Volts IO : 3.0 Amperes FEATURES : * Lower forward voltage than any ultrafast rectifier: V F < 0.59 V at 150 °C * Fast switching speed * So
EIC
EIC
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MBRS3201P   Schottky Fast Soft-Recovery Power Rectifier

MBRS3201P 200 V, 3 A Schottky Fast Soft-Recovery Power Rectifier SMC Power Surface Mount Package Features • Lower Forward Voltage than any Ultrafast Rectifier: VF < 0.59 V at 150°C • Fast Switching Spe
ON Semiconductor
ON Semiconductor
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