डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MBRS320 | SCHOTTKY POWER RECTIFIER MBRS320
SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in swit |
Fairchild Semiconductor |
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MBRS320 | SCHOTTKY BARRIER RECTIFIERS MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3
Preferred Devices
Surface Mount Schottky Power Rectifier
. . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of� |
ON Semiconductor |
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MBRS320 | SCHOTTKY RECTIFIER Bulletin PD-20645 rev. D 03/03
MBRS320
SCHOTTKY RECTIFIER 3 Amp
SMC
Major Ratings and Characteristics Characteristics
IF(AV) Rectangular waveform VRRM IFSM @ t p= 5 µs sine VF TJ @ 3.0 Apk, TJ = 125°C rang |
International Rectifier |
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MBRS3200G | 3.0A Surface Mount Schottky Barrier Rectifiers Chip Schottky Barrier Rectifier
MBRS320G THRU MBRS3200G
3.0A Surface Mount Schottky Barrier Rectifiers -20V-200V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage cu |
American First Semiconductor |
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MBRS3200T3G | Surface Mount Schottky Power Rectifier Surface Mount Schottky Power Rectifier
MBRS3200T3G, NRVBS3200T3G, NRVBS3200NT3G
This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geomet |
ON Semiconductor |
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MBRS3201 | SCHOTTKY FAST SOFT - RECOVERY RECOVERY POWER RECTIFIER Certificate TH97/10561QM
Certificate TW00/17276EM
MBRS3201
PRV : 200 Volts IO : 3.0 Amperes
FEATURES :
* Lower forward voltage than any ultrafast rectifier: V F < 0.59 V at 150 °C * Fast switching speed * So |
EIC |
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MBRS3201P | Schottky Fast Soft-Recovery Power Rectifier MBRS3201P
200 V, 3 A Schottky Fast Soft-Recovery Power Rectifier
SMC Power Surface Mount Package
Features
• Lower Forward Voltage than any Ultrafast Rectifier:
VF < 0.59 V at 150°C
• Fast Switching Spe |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |