MBRS130 डाटा शीट PDF( Datasheet )

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MBRS130LT3/D Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal�

MBRS130L MBRS130L Features • • • Compact surface mount package with J-bend leads. 1.5 Watt Power Dissipation package. 1.0 Ampere, forward voltage less than 395 mv. 0.220 (5.588) 0.200 (5.080) 0.083 (2.10

MBRS120 - MBRS1100 SURFACE MOUNT SCHOTTKY BARRIER DIODES VOLTAGE RANGE: 20 - 100V CURRENT: 1.0 A Features ! Schottky Barrier Chip ! Ideally Suited for Automatic Assembly ! Low Power Loss, High Efficiency ! F

Chip Schottky Barrier Rectifier MBRS120G THRU MBRS1200G 1.0A Surface Mount Schottky Barrier Rectifiers -20V-200V Features • Batch process design, excellent power dissipation offers better reverse leakage cu

MBRS130L MBRS130L Features • • • Compact surface mount package with J-bend leads. 1.5 Watt Power Dissipation package. 1.0 Ampere, forward voltage less than 395 mv. 0.220 (5.588) 0.200 (5.080) 0.083 (2.10

Bulletin PD-20588 rev. E 07/04 MBRS130LTR SCHOTTKY RECTIFIER 1 Amp IF(AV) = 1.0 Amp VR = 30V Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM @ tp= 5 µs sine VF TJ @ 1

MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epi