डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MBR600100CTR | (MBR60045CT - MBR600100CTR) Schottky Power Diode Naina Semiconductor Ltd.
Features
• • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR60045CT thru MBR600100CTR
Silicon Schottky Diode, 600A
TWIN T |
Naina Semiconductor |
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MBR600100CTR | Silicon Power Schottky Diode Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
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America Semiconductor |
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MBR600100CTR | Silicon Power Schottky Diode Silicon Power Schottky Diode
Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive
MBR60045CT thru MBR600100CTR
VRRM = 45 V - 100 V IF(AV) = 600 A
Twin Tower Package
Maxim |
GeneSiC |
www.DataSheet.in | 2017 | संपर्क |