logo

MBR20H100C DataSheet

No. Partie # Fabricant Description Fiche Technique
1
MBR20H100CT

Vishay Siliconix
Dual Common Cathode High Voltage Schottky Rectifier

• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 2
Datasheet
2
MBR20H100CT

ON Semiconductor
SWITCHMODE Power Rectifier
and Benefits http://onsemi.com






• Low Forward Voltage: 0.64 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total (10 A Per Diode Leg) Guard−Ring for Stress Protection Pb−Free Packa
Datasheet
3
MBR20H100CTG

Vishay
Dual Common Cathode High Voltage Schottky Rectifier

• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max., 10 s, per JESD 22-B106
• A
Datasheet
4
MBR20H100C

BCD
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

· Low Forward Voltage: 0.64V @125oC
· High Surge Capacity
· 175oC Operating Junction Temperature
· 20 A Total (10A Each Diode Leg)
· Guard-Ring for Stress Protection
· Pb-Free Package Applications
· Power Supply Output Rectification
· Power Managemen
Datasheet
5
MBR20H100CT

Taiwan Semiconductor
20.0AMPS. Schottky Barrier Rectifiers
— Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency — High current capability, low forward voltage drop — High surge capability — For us
Datasheet
6
MBR20H100CTG

ON Semiconductor
SWITCHMODE Power Rectifier
and Benefits
• Low Forward Voltage: 0.64 V @ 125°C
• Low Power Loss/High Efficiency
• High Surge Capacity
• 175°C Operating Junction Temperature
• 20 A Total (10 A Per Diode Leg)
• Guard−Ring for Stress Protection
• NRVBB Prefix for Automotive and Ot
Datasheet
7
MBR20H100CT

LGE
Schottky Barrier Rectifiers
— Plastic material used carries Underwriters Laboratory Classifications 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency — High current capability, low forward voltage drop — High surge capability — For us
Datasheet
8
MBR20H100C

Diodes
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

 Low Forward Voltage: 0.77V @ +25oC
 High Surge Current Capacity
 +175C Operating Junction Temperature
 20A Total (10A Each Diode Leg)
 Guard-Ring for Stress Protection
 Pb-free Package
 TO-220-3 (2) and TO-220F-3 (Option 1)
 Lead-Free Finis
Datasheet
9
MBR20H100CT

BLUE ROCKET ELECTRONICS
Schottky Barrier Diode
,。 Low power loss, high efficiency. / Applications 、、,,。 For use in low voltage,high frequency inverters, free wheeling, and polarity protection applications. / Equivalent Circuit / Pinning 1 23 PIN1:Anode PIN 2:Cathode PIN 3:Anode / hFE
Datasheet



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact