MBR2090CT डाटा शीट PDF( Datasheet )

Schottky Barrier Rectifier INCHANGE Semiconductor MBR2090CT FEATURES ·Guard -Ring for Stress Protection ·Low Forward Voltage ·High Operating Junction Temperature ·Guaranteed Reverse Avalanche ·Low Power

SCHOTTKY BARRIER RECTIFIER MBR2070CT thru MBR20100CT REVERSE VOLTAGE – 70 to 100 Volts FORWARD CURRENT – 20 Amperes FEATURES • Metal of silicon rectifier, majority carrier conduction • Guard ring for

MBR2080CT, MBR2090CT, MBR20100CT SWITCHMODE™ Power Rectifiers This series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: F

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBR2060CT/D SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art

MBR2070CT - MBR20100CT 20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High S

MBR20100CT, MBRF20100CT & MBRB20100CT Series New Product Vishay Semiconductors formerly General Semiconductor Dual High-Voltage Schottky Rectifiers Reverse Voltage 90 to 100V Forward Current 20A ITO-220AB (M

MBR2060CT-MBR20100CT High-reliability discrete products and engineering services since 1977 20A SCHOTTKY RECTIFIERS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX lev