MBR12035 डाटा शीट PDF( Datasheet )

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  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MBR12020 THRU MBR120100 120 Amp Schottky Barrier Rectifier 20 to 100

Transys Electronics L I M I T E D MBR12020(R) THRU MBR120100(R) SCHOTTKY DIODES MODULE TYPE 120A Features High Surge Capability Types Up to 100V V RRM 120Amp Rectifier 20-100 Volts HALF PACKAGE Maximum Ra

Transys Electronics L I M I T E D MBR12020CT(R) THRU MBR120100CT(R) SCHOTTKY DIODES MODULE TYPE 120A Features High Surge Capability Types Up to 100V V RRM 120Amp Rectifier 20-100 Volts TWIN TOWER A R Maxi

Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR12020CT thru MBR12040CTR Silicon Schottky Diode, 120A TWIN TO

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Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive MBR12020CT thru MBR12040CTR VRRM = 20 V - 40 V IF(AV) = 120 A Twin Tower Package Maximum

® MOTOROLA POWERTAP II SWITCHMODE POWER RECTIFIERS · .. using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: • Dual Diode Constru