MBR1100 डाटा शीट PDF( Datasheet )

MBR170-MBR1100 High-reliability discrete products and engineering services since 1977 1 AMP SCHOTTKY RECTIFIERS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level.

MBR120-MBR1100 AXIAL LEADED SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 20 - 100V CURRENT: 1.0 A Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capabili

ELECTRONIC MBR140 ~ MBR1200 Power Schottky Rectifier - 1Amp 40~200Volt □ Features -For surface mounted applications -Low profile package -Built-in strain relief -Metal silicon junction, majority carrier co

MBR1100 Axial Lead Rectifier These rectifiers employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

Bulletin PD-20587 rev. B 03/03 MBR1100 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM @ tp = 5 µs sine VF TJ @ 1 Apk, TJ = 125°C range De

MBR 1100 SCHOTTKY DIE SPECIFICATION General Description: 100 V 1 A ( Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Max