MBR10L100CT डाटा शीट PDF( Datasheet )

Schottky Barrier Rectifier INCHANGE Semiconductor MBR10L100CT FEATURES ·Metal silicon junction, majority carrier conduction ·Low leakage current, low power loss, high efficiency ·Dual rectifier constructio

Formosa MS High Barrier Low VF Trench MOS Power Schottky Rectifiers MBR10L100CT / MBR10L100FCT List List................................................................................................. 1 Packag

MBR10L100CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant

Chip Integration Technology Corporation MBR10L100CT-T 10A Trench Schottky Rectifier Main Product Characteristics IF(AV) VRRM TJ VF(Typ) 5 X 2A 100V -55 to +150OC 0.56V ■ Features • Low forward voltage