No. | Partie # | Fabricant | Description | Fiche Technique |
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MA-COM |
GaN Wideband Transistor GaN on Si HEMT D-Mode Amplifier Suitable for Linear & Saturated Applications Tunable from DC - 6 GHz 28 V Operation 9 dB Gain @ 5.8 GHz 45% Drain Efficiency @ 5.8 GHz 100% RF Tested Thermally-Enhanced 4 mm 24-Lead QFN RoHS* Complian |
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