डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
LN9926L | 20V Dual N-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD.
20V Dual N-Channel Enhancement-Mode MOSFET
VDS= 20V RDS(ON), [email protected], Ids@4A = 28 m RDS(ON), [email protected], Ids@2A = 40 m Features
Advanced trench process technology High Density Cell De |
LRC |
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LN9926LT1G | Dual N-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD.
LN9926LT1GDual N-Channel Enhancement-Mode MOSFET (20V, 6A)
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimize |
LRC |
www.DataSheet.in | 2017 | संपर्क |