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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
L2SD2114KWLT1 | Epitaxial planar type NPN silicon transistor LESHAN RADIO COMPANY, LTD.
Epitaxial planar type
NPN silicon transistor
zFeatures 1) High DC current gain.
hFE = 1200 (Typ.) 2) High emitter-base voltage.
VEBO =12V (Min.) www.DataSheet4U.com3) Low VCE (sat). |
Leshan Radio Company |
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L2SD2114KWLT1G | Epitaxial planar type NPN silicon transistor LESHAN RADIO COMPANY, LTD.
Epitaxial planar type
NPN silicon transistor
zFeatures 1) High DC current gain.
hFE = 1200 (Typ.) 2) High emitter-base voltage.
VEBO =12V (Min.) www.DataSheet4U.com3) Low VCE (sat). |
Leshan Radio Company |
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