डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
KTD718 | Silicon NPN Power Transistors isc Silicon NPN Power Transistor
INCHANGE Semiconductor
KTD718
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type KTB688 ·Minimum Lot-to-Lot |
Inchange Semiconductor |
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KTD718 | TRIPLE DIFFUSED NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES ᴌRecommended for 45ᴕ50W Audio Frequency
Amplifier Output Stage. ᴌComplementary to KTB688.
MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC
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KEC |
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KTD718B | TRIPLE DIFFUSED NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES Recommended for 45 50W Audio Frequency Amplifier Output Stage. Complementary to KTB688B.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector |
KEC |
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