डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
KTD600K | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS
FEATURES High breakdown voltage VCEO 120V, high current 1A. Low saturation voltage and good linearity of hFE. Complement |
KEC |
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KTD600K | NPN Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
KTD600K
DESCRIPTION ·High Collector Current-IC= 1.0A ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Low Sa |
INCHANGE |
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