डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
KTD1510 | Silicon NPN Power Transistors INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
KTD1510
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·Collector-Emitter Saturation Vol |
Inchange Semiconductor |
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KTD1510 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER DARLINGTON TRANSISTOR.
FEATURES Complementary to KTB2510. Recommended for 60W Audio Amplifier Output Stage.
KTD1510
TRIPLE DIFFUSED NPN TRANSISTOR
MAXIMUM RAT |
KEC |
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