KTB1367 डाटा शीट PDF( Datasheet )

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -2

SEMICONDUCTOR TECHNICAL DATA KTB1367 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). Complementary to KTD2059. MAXIMUM RA