डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
KSD985 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
KSD985
DESCRIPTION ·Collector–Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min.) ·DC Current Gain-
: hFE = 2000( |
Inchange Semiconductor |
|
KSD985 | Audio Frequency Power Amplifier KSD985/986
KSD985/986
Low Frequency Power Amplifier
• Low Speed Switching Industrial Use
1
TO-126 2.Collector 3.Base
1. Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25 |
Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |