KSD1408 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor KSD1408 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.5V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Complement to Type KSB1017

KSD1408 KSD1408 Power Amplifier Applications • Complement to KSB1017 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbo