डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
K365 | 2SK365 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK365
For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications
2SK365
Unit: mm
· High breakdown voltage: VGDS |
Toshiba Semiconductor |
|
K3652 | N-channel enhancement mode MOSFET This product complies with the RoHS Directive (EU 2002/95/EC).
Power MOSFETs
2SK3652
N-channel enhancement mode MOSFET
3.3±0.3Product lifecyclennuaen
■ Features • Low on-resistance, low Qg • High avala |
Panasonic |
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K3659 | 2SK3659 DATA SHEET
www.DataSheet4U.com
MOS FIELD EFFECT TRANSISTOR
2SK3659
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3659 is N-channel MOS FET device that features a low on-state resistance and excellent |
NEC |
www.DataSheet.in | 2017 | संपर्क |