डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
K3568 | 2SK3568 2SK3568
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3568
Switching Regulator Applications
Unit: mm
• Low drain-source ON-resistance: RDS (ON) = 0.4 Ω (typ.) • High forward |
Toshiba Semiconductor |
|
K3568 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 0.52Ω@10V ·Low leakage current:
IDSS <100 µA @VDS = 500 V ·100% avalanche tested ·Minimum Lot-to-Lot variations for r |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |